Curriculum Vitae                 

Education / Experience / Honors&Activities / Reviewer Experience

Education

Georgia Institute of Technology (GIT), U.S.A.

§   Doctor of Philosophy in Electrical Engineering, December 2000

Dissertation Title: Silicon MOS Field Effect Transistor RF/Microwave Nonlinear Model Study and Power Amplifier Development for Wireless Communications

Advisor: Pettit Professor Joy Laskar

Po-hang University of Science and Technology (POSTECH), South Korea

§   Master of Science in Electrical Engineering, February 1997

Kyoung-puk National University (KNU), South Korea

§   Bachelor of Electrical Engineering, February 1989

Experience

Jul. 2002-Present         Research Faculty(Research Engineer), Georgia Institute of Technology, GA

§   Lead a project with IBM to develop mm-wave ICs for 60 GHz WLAN applications

§   Lead a project with National Semiconductor to develop multi-band RF transceiver

§   Lead a project to develop nonlinear model of VCSEL for Opto/RF link

§   Organize a project with Cree to develop a compact, low cost high power amplifier design

§   Assisted on a project with Peregrine to develop SOI based RF front-end development

§   Assisted on a project with Samsung to develop a SiGe power amplifier

§   Manage the RF/Microwave experimental laboratory and computer aided design laboratory

§   Serve as an instructor for RF/Microwave wireless ICs and system design (graduate level)

§   Serve as an instructor for RF/Microwave wireless ICs laboratory (undergraduate level)

Jun. 2000-Jun. 2002      Senior Design and Research Engineer, National Semiconductor Corporation, GA

§   Developed a 1.8 GHz and 2.4 GHz SiGe BiCMOS RF power amplifier

§   Developed a 900 MHz and 1.8 GHz dual-band GSM high power amplifier

§   Developed a CMOS 1.8 GHz and 2.4 GHz power amplifier using TSMC CMOS8T

§   Developed a power amplifier ramp circuit for controlling transmission switch

§   Developed digitally controlled RF switch for RF/Microwave transceiver

§   Contributed to the optimization of National SiGe process for RF applications

§   Provided technical support for the nonlinear model development of National SiGe process

§   Advised graduate students in Georgia Tech, Delft University, and University of Washington to design a linear and high efficiency CMOS power amplifier

§   Assisted in the set-up of experimental laboratory and performing RF benchmark tests of various power amplifier modules

§   Conducted competitive research with Georgia Tech to develop SiGe-LTCC power amplifier

Sep. 1997-Jun. 2000      Graduate Research Assistant, Georgia Institute of Technology, GA

§   Pioneered the development of pulsed-IV measurement at cryogenic temperatures for  device thermal performance analysis

§   Pioneered the development of load-pull measurement at cryogenic temperatures for device nonlinear performance analysis

§   Developed a novel MOSFET large signal model incorporating new breakdown and nonlinear substrate coupling effect models for MOSFET power device

§   Developed a 5.8 GHz GaAs transceiver chip set for OFDM wireless LAN applications

§   Developed a 5.8 GHz GaAs single balanced mixer for wireless LAN applications

§   Developed a Silicon-LTCC high efficiency power amplifier for 1.9 GHz DECT applications

§   Developed a CMOS-LTCC high efficiency power amplifier for 2.4 GHz Home RF applications

§   Developed a SiGe-LTCC high efficiency power amplifier with harmonic suppression filter for 2.4 GHz Home RF applications

§   Developed a GaAs MESFET MMIC linear PA incorporating pre-distorter for C band wireless LAN application using Triquint MESFET process

§   Developed a GaAs PHEMT MMIC linear PA including pre-distorter for 24GHz WLAN application using Raytheon PHEMT technology

§   Developed temperature dependent MESFET, HEMT and MOSFET large signal models for L, S, C and Ka band transmitter design

§   Demonstrated a modified CMOS BSIM3V3 nonlinear model for RF/Microwave applications

Mar. 1995-Feb. 1997     Graduate Research Assistant, POSTECH, Po-hang, South Korea

§   Developed 6-18 GHz wide-band LNA, PA and Variable Gain Amplifier for X-Band Radar application using Raytheon PHEMT process

§   Assisted on a project with Samsung Ltd. to develop a CMOS RF nonlinear model

§   Developed a 27 dBm, 1dB NF, 40 dB Gain low noise amplifier for PCS Base Station

§   Developed a HBT high frequency noise model for low noise amplifier

§   Developed a HBT high frequency large signal model incorporating self-heating effects

§   Served as an instructor for Microprocessor application laboratory class (undergraduate level)

Jan. 1989-Apr. 1994      Senior Design Engineer, LG Information and Communication Ltd., Seoul, South Korea

§   Worked as a digital circuit design and application engineer for five years

§   Developed Level 2 and 3 communication CPU boards and Firmware for Total Electronic Exchanger

§   Developed Level 2 communication CPU board and alarm detection/processing CPU boards for Total Signaling Message Exchanger

§   Managed a digital circuit design team for No. 7. Signaling Message Exchanger

Honors and Activities

§   BEST PAPER AWARD in IEEE Microwave Theory and Techniques International

Microwave Symposium IMS 2000 Student Paper Competition, Boston, MA, May 2000

§   MEMBER of IEEE (Institute of Electrical and Electronics Engineers) Since 1997

Reviewer Experience